| PART |
Description |
Maker |
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| WS628512LLT-70 WS628512LLST-70 WS628512LLFP-70 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
|
WINGS[Wing Shing Computer Components]
|
| WS628512LLT-70 WS628512LLST-70 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
|
永盛国际集团
|
| K6F8016R6D K6F8016R6D-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| DS_K6F8016U6C |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
|
| BS616LV8021AI BS616LV8021 BS616LV8021AC |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
|
BSI[Brilliance Semiconductor]
|
| BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV802 |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| K6F8016U6D-XF70 K6F8016U6D K6F8016U6D-FF55 K6F8016 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| BS62LV4001TI BS62LV4001 BS62LV4001DC BS62LV4001DI |
Low Power/Voltage CMOS SRAM 512K X 8 bit 低功电压CMOS SRAM的为512k × 8
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| A81L801UG-70IF A81L801 A81L801TG-70 A81L801TG-70F |
Stacked Multi-chip Package (MCP) 1 M X 8 Bit / 512K X 16 Bit Boot Sector Flash Memory and 128K x 8 Low Voltage CMOS SRAM
|
AMICC[AMIC Technology]
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